Samsung is currently testing its own 2nm process as a fallback should TSMC capacity fail to meet demand. In a broader push to redesign the AI memory stack, Samsung and SK Hynix are developing HBM4E with target speeds of 16 Gbps, a 20% increase over HBM4. Samsung's 12 high stack version offers 48 GB of capacity and bandwidth of approximately 3.6 TB per second, with initial samples shipped in May.
Tuesday, October 20, 2026
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Samsung Partners With TSMC for Nvidia HBM in First Rival Deal
Tech2 days ago
Nvidia has mandated that its memory suppliers use a 3nm manufacturing process from TSMC for the base dies of its next-generation custom NVHBM chips. This requirement affects Samsung, SK Hynix, and Micron, and marks the first time Samsung and TSMC have collaborated on the manufacturing of high-bandwidth memory. By standardizing the logic layer at the bottom of the memory stack, Nvidia gains the flexibility to shift orders between vendors and can move its memory controller into the base die to increase compute space on the GPU.
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